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10N65场效应管 (MOSFET)，HXY MOSFET (华轩阳电子)原厂出品，数量1个N沟道，漏源电压 (Vdss)650V，连续漏极电流 (Id)10A，封装TO-220F，价格￥1.29元。 提供高清引脚图、PCB焊盘图、3D模型及Datasheet数据手册，支持选型与设计参考，正品现货，一站式元器件采购尽在立创商城。
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
3 days ago · 10N65场效应管参数,10N65引脚图 10N65 是一款 N 沟道功率场效应管（MOSFET），由烜芯微专业生产制造。 该器件采用 TO-252 封装，具有超高耐压、低功耗特性，广泛应用于电源管理、电机控制、LED 驱动、适配器及各类开关电源电路中。
Order today, ships today. 10N65F – N-Channel 650 V 10A (Tc) 50W Through Hole ITO-220AB from EVVO. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
10N65 Datasheet: MOSFET/N-Ch/650V/10A. View the complete specification and find equivalents, replacement transistors, pin configuration.
May 31, 2022 · 文章浏览阅读6k次。 本文详细介绍了10N65 MOS管的电性参数，如VGS、Io、PD、RDS (ON)，以及浪涌电流、工作温度范围等。 重点阐述了其在开关电源、LED照明等领域的应用。
