Searching…
Download the PDF file of the data sheet for the 2N5401 PNP high-voltage transistor in a TO-92 or SOT54 package. See the product specification, pin description, limiting values, thermal characteristics, and application...
A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
Description: PNP high-voltage transistor. Manufacturer: NXP Semiconductors.
2N5401 / MMBT5401 PNP General Purpose Amplifier. This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. 2N5401MMBT5401. Absolute Maximum Ra...
A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein.
Notes: 1. Pulse test: Pulse width ≤ 300us, duty cycle ≤ 2%. VCE, Collector-Emitter Voltage (V) Figure 1. Static Characteristic. Figure 3. VCEsat — IC. Figure 5. IC — VBE. IC, Collector Current (mA) Figure 4. VBEsat — ...
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not nor-mal operating conditions) and are not valid simultaneously. If t...
The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet-ers which may be included on RECTRON data sheets and/ or specifications ca-n and do vary in...
FEATURES •Low current (max. 300 mA) •High voltage (max. 150 V). APPLICATIONS •General purpose switching and amplification •Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic pack...
