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2SC2166 Datasheet (HTML) - Mitsubishi Electric Semiconductor 2SC2166 Product details DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio appli...
2SC2166 datasheet ..1. Size:26K jmnic 2sc2166.pdf Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed f...
2SC2166 ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION – Designed for RF power amplifier on HF band mobile radio applications. 6W output power class AB amplifier applications in HF band.
总耗散功率（Ptot）： 【管壳温度（Tc）＝25 ℃】 12.5 W
DESCRIPTION 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.
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2SC2166 NPN Transistor *High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V *High Reliability *Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS *Designed for 3 to...
2SC2166 Datasheet : NPN EPITAXIAL PLANAR TYPE RF Power Transistor , 2SC2166 PDF VIEW Download MITSUBISHI ELECTRIC , 2SC2166 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits
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