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Part #: 3DD301D. Download. File Size: 72Kbytes. Page: 2 Pages. Description: isc Silicon NPN Power Transistor. Manufacturer: Inchange Semiconductor Company Limited.
3DD301D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified ... NOTICE: ISC reserves without notification. applications of our products.
3dd301d.pdf isc Silicon NPN Power Transistor 3DD301D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V (Max) @I = 3A CE (sat) C Minimum Lot-to-Lot v...
INCHANGE Semiconductorisc Product Specificationisc Silicon NPN Power Transistor3DD301DDESCRIPTION·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min)·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @I...
3DD301D Datasheet : Silicon NPN Power Transistor, 3DD301D PDF VIEW Download Inchange Semiconductor, 3DD301D 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits
3DD301D isc Silicon NPN Power Transistor . DESCRIPTIONCollector-Emitter Breakdown Voltage: V (BR)CEO= 150V (Min)Collector-Emitter Saturation Voltage: VCE (sat)= 1.5V (Max) @IC= 3A. Collector Current-Continuous Collect...
Input part numberInput parameters NPN transistor PNP transistor N-Channel FET P-Channel FET diode SCR Voltage V Current A Part Number: 3DD301D Part Type: NPN Transistor Collector power dissipation (PC):30 W Collector ...
The 3DD301D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD301D transistor has a positively charged layer between two negatively charged layers.
3DD301D, 3DD301D Selling Leads, Summary: Application·Designed for B/W TV vertical output applicationsSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 300 V VCEO Collector to emitter voltage 1...
3DD301D,IC资料网为你提供ISC数据手册,Inchange Semiconductor Company Limited代理商,数据表,规格书,设计实例,无锡固电半导体股份有限公司中文资料,无锡固电供应商,3DD301D价格,isc Silicon NPN Power Transistor资料表,pdf Datasheet引脚功能和电子元器件使用手册
