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FQPF5N60C中文资料_最新报价_数据手册下载_onsemi(安森美)-场效应管(M...
场效应管 (MOSFET) FQPF5N60C由onsemi (安森美)设计生产，立创商城现货销售，正品保证，参考价格￥11.76，封装为TO-220F-3。 商城还提供FQPF5N60C专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
www.mouser.com
FQP5N60C / FQPF5N60C - Mouser Electronics
Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduc...
www.alldatasheet.com
5N60C Datasheet (PDF) - Fairchild Semiconductor
Part #: 5N60C. Download. File Size: 621Kbytes. Page: 9 Pages. Description: 600V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
www.datasheetcafe.com
5N60C Datasheet PDF – 600V, 4.5A, N-Channel MOSFET
Jan 19, 2023 · Part Number: 5N60C Function: 600V, 4.5A, N-Channel MOSFET Package: TO-220, TO-220F Type Manufacturer: Fairchild Image
www.onsemi.com
FQPF5N60C - onsemi
These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis...
www.onsemi.cn
High Voltage MOSFETs | FQPF5N60C - onsemi.cn
此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率系数校正、基于半桥的电子灯镇流器。
zhidao.baidu.com
场效应管5n60c技术参数 - 百度知道
Jul 6, 2024 · 5N60C是N沟道MOS场效应管，漏极电流为4、5A，脉冲电流允许18A，D-S耐压600V。 功耗:33W，工作温度范围:-55°C to +150°C，封装类型:TO-220F，功率，Pd:33W，封装类型:TO-220F，常用于开关电源中作开关管。