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This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Table 1. Device summary. Table 2. 1. Calculated according to t...
Description: 20 A - 600 V - short circuit rugged IGBT. Manufacturer: STMicroelectronics.
1N6019D is available for purchase but is not normally stocked. Image shown is a representation only. Exact specifications should be obtained from the product data sheet. This product is not kept in stock at DigiKey. T...
Description: 600V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
Benefit from simplified assembly and reduced design complexity to achieve optimal thermal performance for highest efficiency and power density at lower system cost. A full-fledged analog circuit simulation engine, sch...
品牌:其他，型号:HRT60N19D，封装:TO-252，批号:/，FET类型:N沟道，漏源电压（Vdss）:60V，漏极电流 (Id):50A，漏源导通电阻 (RDS On):13.5mΩ，栅源电压 (Vgs):40nC，栅极电荷 (Qg):/，反向恢复时间:/，最大耗散功率:/（mW），配置类型:/，工作温度范围:/，安装类型:/。 我们还为您精选了N沟道MOSFET公司黄页、行业资讯、价格行情、展会信息等，欲了解更多详细信息,请点击访问!
Buy FQA19N60 - ONSEMI - Power MOSFET, N Channel, 600 V, 18.5 A, 0.38 ohm, TO-3P, Through Hole. Farnell® UK offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support.
