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Part #: 2SC3346. Download. File Size: 129Kbytes. Page: 3 Pages. Description: SILICON NPN EPITAXIAL TYPE(PCT PROCESS). Manufacturer: Toshiba Semiconductor.
Apr 19, 2022 · 2SC3346 Transistor - 80V, 12A, NPN , 2SC3346 pdf, pinout, schematic, 2SC3346 manual, C3346 data, circuit, equivalent.
C3346 datasheet by Toshiba. 2SC3346. File size: 353.96 KB. View specifications and download PDF.
MAX UNIT J BDEC 1. a BASE COLLECTOR (HEAT SINK) EMITTER TO—220AB (Max.) . High Speed Switching Time : Complementary . to 2SA1329 MAXIMUM RATINGS (Ta=250C) CHARACTERISTIC Collector—Base Voltage Collector—Emitter Voltag...
Type Designator: 2SC3346 📄 📄 Material of Transistor: Si Polarity: NPN Absolute Maximum Ratings Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltag...
C3346 Datasheet : SILICON NPN EPITAXIAL TYPE (PCT PROCESS), C3346 PDF Download Toshiba, C3346 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits
The C3346 electronic component is brought into production by TOSHIBA, included in Transistors. Each device is available in a small TO-220 package and specified over the extended temperature range of -40°C to 105°C (TA).
