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IRF7341 is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 50 mOhm, Package: SO-8, Technology: IR MOSFET™, ID max: 4.7 A
IRF7341TRPBF – Mosfet Array 55V 4.7A 2W Surface Mount 8-SO from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7341 Datasheet: MOSFET/N-Ch/55V/4.7A. View the complete specification and find equivalents, replacement transistors, pin configuration.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7341PBF Infineon Technologies MOSFETs 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS datasheet, inventory, & pricing.
IRF7341 MOSFET, IRF7341 4.7A 55V Dual N-Channel MOSFET. Buy IRF7341 N-Channel MOSFET.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Download the IRF7341 datasheet PDF (135.00 KB) by International Rectifier. Includes overview, features, pinout, and specifications.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
