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The TK11P65W is a Toshiba 400V - 900V MOSFETs product. N-ch MOSFET, 650 V, 0.44 Ω@10V, DPAK, DTMOSⅣ Switching Voltage Regulators｜ Find data sheet and product information from the product details page.
场效应管 (MOSFET) TK11P65W,RQ由TOSHIBA (东芝)设计生产，立创商城预售销售，正品保证，参考价格￥4.61，封装为DPAK。 商城还提供TK11P65W,RQ专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
TK11P65W是东芝的400V-900V MOSFET产品。 N-ch MOSFET, 650 V, 0.44 Ω@10V, DPAK, DTMOSⅣ Switching Voltage Regulators｜从产品详细信息页面查找数据表和产品信息。
TK11P65W Datasheet (HTML) - Toshiba Semiconductor TK11P65W Product details Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS (ON) = 0.35 Ω (typ.) by used to Super Junction St...
Sep 17, 2014 · Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reli...
Datasheet Specifications Part number TK11P65W Manufacturer Toshiba ↗ File Size 241.23 KB Datasheet TK11P65W-Toshiba.pdf Description N-Channel MOSFET
TK11P65W,RQ – N-Channel 650 V 11.1A (Ta) 100W (Tc) Surface Mount DPAK from Toshiba Semiconductor and Storage. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
电压 V 电流 A 型号： TK11P65W 类型： N沟道场效应管 耗散功率（PD）： 【管壳温度（Tc）＝25 ℃】100 W 漏极电流（ID）：11.1 A 漏极和源极电压（V DSS）： 650 V 漏极和源极通态电阻（R DS (on)）： 0.44 Ω 封装：DPAK
Part #: TK11P65W. Description: MOSFETs Silicon N-Channel MOS. File Size: 245.99 Kbytes. Manufacturer: Toshiba Semiconductor.
部件名: TK11P65W. 下载. 文件大小: 245Kbytes. 页: 10 Pages. 功能描述: MOSFETs Silicon N-Channel MOS. 制造商: Toshiba Semiconductor.
