p25nm50n参数

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P25NM50N-VB - vbsemi.com

P25NM50N-VB www.VBsemi.com Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage 100

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P25NM50N Datasheet, PDF - Alldatasheet

P25NM50N Datasheet. Part #: STP25NM50N. Datasheet: 678Kb/16P. Manufacturer: STMicroelectronics. Description: N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET. 4 Results. Datasheet:...

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STx25NM50N - STMicroelectronics

Description This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s...

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P25NM50N-VB - VBsemi MOS管制造商

P25NM50N-VB 是一款采用 TO220 封装的单极 N 沟道 MOSFET,专为高压应用而设计。 其 VDS 达到 500V,使其能够在电源转换和电动机驱动等领域中表现出色。 该 MOSFET 采用 SJ_Multi-EPI 技术,具有优良的导通性能和较低的 RDS (ON),提供高效的功率传输。

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P25NM50N-VB - VBsemi Power MOSFETs Manufacturer

P25NM50N-VB is a unipolar N-channel MOSFET in TO220 package, designed for high voltage applications. Its VDS reaches 500V, enabling it to perform well in areas such as power conversion and motor drive.