P25NM50N-VB - vbsemi.com
P25NM50N-VB www.VBsemi.com Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage 100
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P25NM50N-VB www.VBsemi.com Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage 100
P25NM50N Datasheet. Part #: STP25NM50N. Datasheet: 678Kb/16P. Manufacturer: STMicroelectronics. Description: N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET. 4 Results. Datasheet:...
该器件设计用于高功率应用,具有较高的电压和电流承受能力,适用于电源管理、DC-DC转换器、电机控制和工业自动化等领域。 P25NM50N采用TO-220封装,具备良好的热管理和高可靠性。
Description This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s...
STP25NM50N Transistor Datasheet, STP25NM50N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Order today, ships today. STP25NM50N – N-Channel 500 V 22A (Tc) 160W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
View results and find p25nm50n datasheets and circuit and application notes in pdf format.
P25NM50N-VB 是一款采用 TO220 封装的单极 N 沟道 MOSFET,专为高压应用而设计。 其 VDS 达到 500V,使其能够在电源转换和电动机驱动等领域中表现出色。 该 MOSFET 采用 SJ_Multi-EPI 技术,具有优良的导通性能和较低的 RDS (ON),提供高效的功率传输。
STP25NM50N STMicroelectronics MOSFETs N-CHANNEL MOSFET Power MDmesh datasheet, inventory, & pricing.
P25NM50N-VB is a unipolar N-channel MOSFET in TO220 package, designed for high voltage applications. Its VDS reaches 500V, enabling it to perform well in areas such as power conversion and motor drive.